symbol v ds v gs i dm t j , t stg symbol ty p max 275 330 360 450 r jl 300 350 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 20 gate-source voltage drain-source voltage 60 continuous drain current a, f maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 0.3 1.6 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 0.4 0.24 -55 to 150 t a =70c i d 0.4 AO5800E features v ds (v) = 60v i d = 0.4a (v gs = 10v) r ds(on) < 1.6 ? (v gs = 10v) r ds(on) < 1.9 ? (v gs = 4.5v) the AO5800E uses advanced trench technology to provide excellent r ds(on) , low gate charge, and operation with gate voltages as low as 4.5v, in the small sc89-6l footprint. it can be used for a wide variety of applications, including load switching, low current inverters and low current dc-dc converters. rohs compliant g1 d1 s1 g2 d2 s2 dual n-channel enhancement mode field effect transistor general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 60 v 1 t j =55c 5 1 a 100 na v gs(th) 1 1.6 2.5 v i d(on) 1.6 a 1.3 1.6 t j =125c 2.45 3 1.5 1.9 ? g fs 0.5 s v sd 0.8 1 v i s 0.4 a c iss 41 50 pf c oss 9pf c rss 6pf t d(on) 39.2 ns t r 35.7 ns t d(off) 261 ns t f 79 ns t rr 11.3 14 ns q rr 7.5 nc gate-body leakage current on state drain current v gs =10v, v ds =5v maximum body-diode continuous current switching parameters v ds =5v, i d =0.4a i s =0.1a,v gs =0v turn-off delaytime v gs =10v, v ds =30v, r l =75 ? , r gen =3 ? turn-off fall time output capacitance turn-on delaytime input capacitance dynamic parameters ? v gs =4.5v, i d =0.3a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =48v, v gs =0v v ds =0v, v gs =10v zero gate voltage drain current i gss v ds =0v, v gs =4.5v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =0.4a, di/dt=100a/ s, v gs =-9v drain-source breakdown voltage i d =250 a, v gs =0v v gs =10v, i d =0.4a reverse transfer capacitance i f =0.4a, di/dt=100a/ s, v gs =-9v v gs =0v, v ds =30v, f=1mhz turn-on rise time a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. rev 0: aug 2007 AO5800E dual n-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristic s 0 0.5 1 1.5 2 012345 v ds (volts) figure 1: on-region characteristics i d (a) v gs =3.0v 4v 6v 10v 4.5v 0 0.2 0.4 0.6 0.8 1 012345 v gs (volts) figure 2: transfer characteristics i d (a) -40c 1 1.5 2 2.5 3 0 0.5 1 1.5 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.0 0.4 0.8 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c -40c 0.6 1.0 1.4 1.8 2.2 2.6 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =0.4a v gs =4.5v i d =0.3a 1 1.5 2 2.5 3 3.5 4 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) ( ? ) 25c 125c v ds =5v v gs =10v i d =0.4a 25c 125c v gs =4.5v 35v AO5800E dual n-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 4
typical electrical and thermal characteristic s 0 2 4 6 8 10 0.0 0.3 0.6 0.9 1.2 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 10 20 30 40 50 60 0 102030405060 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 2 4 6 8 10 12 14 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.00 0.01 0.10 1.00 10.00 0.1 1 10 100 -v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j( m a x ) =150c, t a =25c v ds =30v i d =0.4a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =330c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s t o n t p d t o n p d AO5800E dual n-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 4
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